Technology for nanoelectronics applications
Semiconductor processes are moving towards such small geometries that standard IC construction techniques are reaching their limits, and running into problems of current leakage, heat dissipation and higher resistivity. Nanomaterials are widely viewed as a means of extending Moore's Law (or "More Moore"). Surrey NanoSystems has researched and developed two major nanoelectronics technologies to support the continued scaling of semiconductor devices:
Low growth temperature carbon nanotube technologies
Carbon nanotubes (CNTs) offer revolutionary material properties to replace copper vias in back-end-of-line (BEOL) device interconnect and Via fabrication. However, the deposition tools and process techniques to support precise and repeatable fabrication lag behind the materials science. Surrey NanoSystems' expertise in both carbon nano structure fabrication and hardware processing systems has allowed the company to solve many of the key barriers to CNT process adoption for semiconductor applications.
Our low temperature, CMOS compatible synthesis methodology is also suitable for growing other nanomaterials including graphene, nanowires, nanoparticles and nanoclusters.
Advanced thin film polymer dielectrics
Cutting leakage current is a critical requirement for progress in silicon devices. The nanomaterial research capabilities of Surrey NanoSystems and their partners have allowed us to develop a new class of high performance, CVD deposited, dielectric material for interlayer or inter-metal insulation (ILD/IMD) and back end packaging applications. This class of material offers a fully dense, zero porosity, and high strength material with optimal wet chemistry resistance. With an effective dielectric constant of ~2.1, it offers an advanced alternative to current materials such as silicon dioxide, spin on dielectrics and porous interlayer dielectrics.
These thin film materials combine ceramic-like properties (low leakage, chemical resistance, very high voltage dielectric breakdown, thermal stability) with the creep response of an elastomer, and represents a breakthrough material for inter-layer dielectrics in next-generation semiconductors.
These materials use only environmentally friendly growth precursors and a single-stage process, making it both easy and economic to fabricate and scale up on existing production platforms
The mechanical properties of this class of material suit it to broader application in device packaging, coating of critical components and membrane engineering.
Our core focus:
Fundamental nanoelectronics process and material solutions to resolve i.c. scaling challenges.
Find out more
To find out more, contact us on +44 (0) 1273 515899, or see our contact page.